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PDF P4NK60ZFP Data sheet ( Hoja de datos )

Número de pieza P4NK60ZFP
Descripción STP4NK60ZFP
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo

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1. - 600V, MOSFET - STP4NK60ZFP






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STP4NK60Z,
STP4NK60ZFP
N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™
Power MOSFETs in TO-220 and TO-220FP packages
Datasheet - production data
Features
TAB
3
2
1
TO-220
3
2
1
TO-220FP
Order codes VDS RDS(on) max. PTOT
STP4NK60Z
600 V 2 70 W
STP4NK60ZFP
100% avalanche tested
Very low intrinsic capacitances
Zener-protected
ID
4A
Figure 1. Internal schematic diagram
D(2, TAB)
G(1)
Applications
Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
S(3)
AM01476v1
Order codes
STP4NK60Z
STP4NK60ZFP
Table 1. Device summary
Marking
Packages
P4NK60Z
P4NK60ZFP
TO-220
TO-220FP
Packaging
Tube
January 2014
This is information on a product in full production.
DocID025020 Rev 2
1/16
www.st.com

1 page




P4NK60ZFP pdf
STP4NK60Z, STP4NK60ZFP
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4 A, di/dt = 100 A/μs
VDD = 24 V, Tj = 150 °C
(see Figure 19)
1. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
2. Pulse width limited by safe operating area
-
-
-
-
-
-
400
1700
8.5
4
16
1.6
A
A
V
ns
nC
A
Symbol
Table 8. Gate-source Zener diode
Parameter
Test conditions
Min Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0
30 - - V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID025020 Rev 2
5/16
16

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P4NK60ZFP arduino
STP4NK60Z, STP4NK60ZFP
Package mechanical data
Figure 23. TO-220 type A drawing
DocID025020 Rev 2
BW\SH$B5HYB7
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