PDF IRFZ46Z Data sheet ( Hoja de datos )

Número de pieza	IRFZ46Z
Descripción	AUTOMOTIVE MOSFET
Fabricantes	International Rectifier
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No Preview Available ! PD - 94769 AUTOMOTIVE MOSFET IRFZ46Z IRFZ46ZS Features O Advanced Process Technology O Ultra Low On-Resistance IRFZ46ZL HEXFET® Power MOSFET O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching D VDSS = 55V O Repetitive Avalanche Allowed up to Tjmax Description G RDS(on) = 13.6mΩ Specifically designed for Automotive applica- tions, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely S ID = 51A low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an ex- tremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings TO-220AB IRFZ46Z D2Pak IRFZ46ZS TO-262 IRFZ46ZL Parameter Max. Units ID @ TC = 25°C ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) cPulsed Drain Current 51 36 200 A PD @TC = 25°C Maximum Power Dissipation 82 W VGS EAS EAS (tested) IAR EAR Linear Derating Factor Gate-to-Source Voltage dSingle Pulse Avalanche Energy (Thermally Limited) iSingle Pulse Avalanche Energy Tested Value cAvalanche Current hRepetitive Avalanche Energy 0.54 ± 20 63 97 See Fig.12a,12b,15,16 W/°C V mJ A mJ TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw Thermal Resistance 10 lbf•in (1.1N•m) Parameter Typ. Max. Units RθJC Junction-to-Case RθCS Case-to-Sink, Flat, Greased Surface RθJA Junction-to-Ambient jRθJA Junction-to-Ambient (PCB Mount, steady state) HEXFET® is a registered trademark of International Rectifier. ––– 0.50 ––– ––– 1.84 ––– 62 40 °C/W www.irf.com 1 09/12/03 1 page 55 50 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 9. Maximum Drain Current vs. Case Temperature IRFZ46Z/S/L 2.5 ID = 31A VGS = 10V 2.0 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.001 1E-006 SINGLE PULSE ( THERMAL RESPONSE ) τJ τJ τ1 τ1 R1R1 Ci= τi/Ri Ci i/Ri R2R2 τ2 τ2 R3R3 Ri (°C/W) τi (sec) τCτ 0.9322 0.000357 τ3τ3 0.5533 0.001133 0.3545 0.004091 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) 0.1 1 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 5 Page TO-262 Package Outline Dimensions are shown in millimeters (inches) IRFZ46Z/S/L IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RE CT IF IE R LOGO AS SEMBLY LOT CODE www.irf.com PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 11 11 Page

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