|
|
PDF IRFZ44VL Data sheet ( Hoja de datos )
| Número de pieza | IRFZ44VL | |
| Descripción | (IRFZ44VL / IRFZ44VS) Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFZ44VL (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
PD - 94050A
IRFZ44VS
IRFZ44VL
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
D
VDSS = 60V
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
RDS(on) = 16.5mΩ
ID = 55A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44VL) is available for low-profile applications.
D2Pak
IRFZ44VS
TO-262
IRFZ44VL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
55
39
220
115
0.77
± 20
115
55
11
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
1.3
40
Units
°C/W
www.irf.com
1
01/04/02
1 page  
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current vs.
Case Temperature
10
IRFZ44VS/IRFZ44VL
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V+- DD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFZ44VL.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFZ44V | Power MOSFET ( Transistor ) | International Rectifier |
| IRFZ44VL | (IRFZ44VL / IRFZ44VS) Power MOSFET | International Rectifier |
| IRFZ44VLPbF | HEXFET Power MOSFET | International Rectifier |
| IRFZ44VS | (IRFZ44VL / IRFZ44VS) Power MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |