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PDF DE475-102N21A Data sheet ( Hoja de datos )

Número de pieza DE475-102N21A
Descripción RF Power MOSFET
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! DE475-102N21A Hoja de datos, Descripción, Manual

N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
30MHz Maximum Frequency
Symbol Test Conditions
DE475-102N21A
RF Power MOSFET
Maximum Ratings
VDSS = 1000 V
ID25 = 24 A
RDS(on) = 0.41
VDSS
VDGR
VGS
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
1000
1000
±20
V
V
V
PDC = 1800W
VGSM
ID25
IDM
IAR
EAR
dv/dt
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
±30 V
24 A
144 A
21 A
30 mJ
5 V/ns
>200 V/ns
PDC
PDHS
PDAMB
RthJC
RthJHS
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ
TJM
Tstg
TL
Weight
Tc = 25°C
Derate 4.0W/°C above 25°C
Tc = 25°C
1800
730
4.5
W
W GATE
W
DRAIN
0.08 C/W
0.20 C/W
SG1 SG2
SD1 SD2
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 4 ma
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
min.
1000
2.5
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
VDS = 15 V, ID = 0.5ID25, pulse test
-55
-55
typ. max.
V
5.5 V
±100 nA
50 µA
1 mA
0.41
27 S
+175 °C
175 °C
+175 °C
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other haz-
ardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to 30MHz
Easy to mount—no insulators needed
High power density
1.6mm (0.063 in) from case for 10 s
300 °C
3g

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