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PDF FDT461N Data sheet ( Hoja de datos )
| Número de pieza | FDT461N | |
| Descripción | N-Channel Logic Level PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDT461N
N-Channel Logic Level PowerTrench® MOSFET
100V, 0.4A, 2.5Ω
Features
• rDS(ON) = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A
• Qg(tot) = 2.36nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
Applications
• Servo Motor Load Control
• DC-DC converters
April 2004
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
SOT-223
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA= 110oC/W)
Continuous (TA = 25oC, VGS = 4.5V, RθJA= 110oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
G
Thermal Characteristics
RθJA
RθJA
RθJA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in2
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in2
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in2
D
DS
Ratings
100
±20
0.54
0.4
Figure 4
6.3
1.13
9
-55 to 150
110
128
147
Units
V
V
A
A
A
mJ
W
mW/oC
oC
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
461
Device
FDT461N
Package
SOT-223
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
©2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
1 page  
Typical Characteristics TA = 25°C unless otherwise noted
1.2
ID = 250µA
1.1
1.0
0.9
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
200
100 CISS = CGS + CGD
COSS ≅ CDS + CGD
10
CRSS = CGD
1
0.1
VGS = 0V, f = 1MHz
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 12. Capacitance vs Drain to Source
Voltage
10
VDD = 50V
8
6
ID = 0.54A
4
2
0
0
0.5 1.0 1.5 2.0
Qg, GATE CHARGE (nC)
2.5
Figure 13. Gate Charge Waveforms for Constant Gate Current
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 14. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 15. Unclamped Energy Waveforms
©2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDT461N.PDF ] | |
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