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PDF XN04504 Data sheet ( Hoja de datos )
| Número de pieza | XN04504 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Composite Transistors
XN04504 (XN4504)
Silicon NPN epitaxial planar type
For amplification of low-frequency output
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD1328 × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
25
20
12
0.5
1
300
150
−55 to +150
Unit
V
V
V
A
A
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5X
Internal Connection
45
6
Tr2 Tr1
■ Electrical Characteristics Ta = 25°C ± 3°C
321
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 25 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 12 V
Collector-base cutoff current (Emitter open) ICBO
Forward current transfer ratio *1
hFE1
VCB = 25 V, IE = 0
VCE = 2 V, IC = 0.5 A
100 nA
200 800
hFE2 VCE = 2 V, IC = 1 A
60
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
VCE(sat)
VBE(sat)
IC = 0.5 A, IB = 20 mA
IC = 0.5 A, IB = 50 mA
0.13 0.40
1.2
V
V
Transition frequency
fT VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
10 pF
ON resistance *2
Ron
1.0 Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
1 kΩ
*2: Ron test circuit
IB = 1 mA
f = 1 kHz
V = 0.3 V
VB VV VA
Publication date: February 2004
Ron =
VB ×
VA
1 000
− VB
(Ω)
Note) The part number in the parenthesis shows conventional part number.
SJJ00078BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet XN04504.PDF ] | |
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