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PDF IRFU3518 Data sheet ( Hoja de datos )

Número de pieza IRFU3518
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFU3518 Hoja de datos, Descripción, Manual

Applications
l High frequency DC-DC converters
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
PD - 94523
VDSS
80V
IRFR3518
IRFU3518
HEXFET® Power MOSFET
RDS(on) max
29mW
ID
30A
D-Pak
IRFR3518
I-Pak
IRFU3518
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
dv/dt
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)†
Junction-to-Ambient
Notes  through † are on page 10
www.irf.com
Max.
80
± 20
38
27
150
110
0.71
5.2
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.4
40
110
Units
V
A
W
W/°C
V/ns
°C
Units
°C/W
1
09/23/02

1 page




IRFU3518 pdf
40
LIMITED BY PACKAGE
30
20
10
0
25 50 75 100 125 150 175
TC, Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFR3518/IRFU3518
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5

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