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PDF L6710 Data sheet ( Hoja de datos )

Número de pieza L6710
Descripción 6 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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L6710
6 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER
WITH DYNAMIC VID MANAGEMENT
2 PHASE OPERATION WITH
SYNCRHONOUS RECTIFIER CONTROL
ULTRA FAST LOAD TRANSIENT RESPONSE
INTEGRATED HIGH CURRENT GATE
DRIVERS: UP TO 2A GATE CURRENT
6 BIT PROGRAMMABLE OUTPUT
COMPLIANT WITH VRD 10
DYNAMIC VID MANAGEMENT
0.5% OUTPUT VOLTAGE ACCURACY
10% ACTIVE CURRENT SHARING
ACCURACY
DIGITAL 2048 STEP SOFT-START
OVERVOLTAGE PROTECTION
OVERCURRENT PROTECTION REALIZED
USING THE LOWER MOSFET'S RdsON OR A
SENSE RESISTOR
OSCILLATOR EXTERNALLY ADJUSTABLE
AND INTERNALLY FIXED AT 150kHz
POWER GOOD OUTPUT AND ENABLE
FUNCTION
INTEGRATED REMOTE SENSE BUFFER
APPLICATIONS
POWER SUPPLY FOR HIGH CURRENT
MICROPROCESSORS
POWER SUPPLY FOR SERVER AND
WORKSTATION
DISTRIBUTED POWER SUPPLY
PIN CONNECTION (top view)
TQFP44 (10 x 10 x 1mm) Exposed Pad
ORDERING NUMBERS:L6710
L6710TR (Tape & Reel)
DESCRIPTION
The device implements a two phase step-down
controller with a 180 phase-shift between each
phase with integrated high current drivers in a
compact 10x10mm body package with exposed
pad. A precise 6-bit digital to analog converter
(DAC) allows adjusting the output voltage from
0.8375V to 1.6000V with 12.5mV binary steps
managing Dynamic VID code changes.
The high precision internal reference assures the
selected output voltage to be within 0.5% over line
and temperature variations. The high peak current
gate drive affords to have fast switching to the ex-
ternal power mos providing low switching losses.
The device assures a fast protection against load
over current and load over/under voltage. An inter-
nal crowbar is provided turning on the low side
mosfet if an over-voltage is detected.
In case of over-current, the system works in Con-
stant Current mode until UVP
March 2004
N.C.
HGATE2
PHASE2
N.C.
LGATE2
PGND
LGATE1
VCCDR
PHASE1
HGATE1
N.C.
33 32 31 30 29 28 27 26 25 24 23
34 22
35 21
36 20
37 19
38 18
39 17
40 16
41 15
42 14
43 13
414
2
3
4
5
6
7
8
9
12
10 11
OSC / FAULT
ISEN2
PGNDS
ISEN1
FBG
FBR
N.C.
N.C.
OUTEN
VSEN
REF_OUT
1/34

1 page




L6710 pdf
L6710
ELECTRICAL CHARACTERISTICS
(Vcc = 12V±15%, TJ = 0 to 70°C unless otherwise specified)
Symbol
Parameter
Test Condition
Min Typ Max Unit
Vcc SUPPLY CURRENT
ICC Vcc supply current
HGATEx and LGATEx open
VCCDR=BOOT=12V
7.5 10 12.5 mA
ICCDR VCCDR supply current
LGATEx open; VCCDR=12V
2 3 4 mA
IBOOTx Boot supply current
HGATEx open; PHASEx to
PGND
VCC=BOOTx=12V
0.5 1 1.5 mA
POWER-ON
Turn-On VCC threshold
VCC Rising; VCCDR=5V
8.2 9.2 10.2 V
Turn-Off VCC threshold
VCC Falling; VCCDR=5V
6.5 7.5 8.5
V
Turn-On VCCDR
Threshold
VCCDR Rising
VCC=12V
4.2 4.4 4.6
V
Turn-Off VCCDR
Threshold
VCCDR Falling
VCC=12V
4.0 4.2 4.4
V
OUTENIL Output Enable
Level
OUTENIH
Input Low
Input High
0.4 V
0.8 V
OSCILLATOR
fOSC Initial Accuracy
OSC = OPEN
OSC = OPEN; Tj=0°C to 125°C
135 150 165
127 178
kHz
kHz
dMAX Maximum duty cycle
Vosc Ramp Amplitude
OSC = OPEN: IFB=0
OSC = OPEN; IFB=70µA
72 80
30 40
3
%
%
V
FAULT Voltage at pin OSC
OVP or UVP Active
4.75 5.0 5.25
V
REFERENCE AND DAC
Output Voltage
Accuracy
VID0 to VID5 see Table1;
FBR = VOUT; FBG = GND
-0.5 -
0.5 %
REF_OUT REF_OUT Accuracy
VID0 to VID5 see Table1;
-1.5 -
1.5 %
IVID VID pull-up Current
VIDx = GND
3 4.5 6 µA
VVID VID pull-up Voltage
VIDx = OPEN
2.9 - 3.3 V
VIDIL
VIDIH
VID Input
Level
Input Low
Input High
0.4 V
1.0 V
ERROR AMPLIFIER
A0 DC Gain
SR Slew-Rate
COMP=10pF
80 dB
15 V/µs
5/34

5 Page





L6710 arduino
Figure 2. Drivers peak current: High Side (left) and Low Side (right).
L6710
CH3 = HGATE1; CH4 = HGATE2
CH3 = LGATE1; CH4 = LGATE2
CURRENT READING AND OVER CURRENT
The current flowing trough each phase is read using the voltage drop across the low side mosfets RdsON
or across a sense resistor (RSENSE) and internally converted into a current. The transconductance ratio is
issued by the external resistor Rg placed outside the chip between ISENx and PGNDS pins toward the
reading points.
The differential current reading rejects noise and allows to place sensing element in different locations
without affecting the measurement's accuracy. The current reading circuitry reads the current during the
time in which the low-side mosfet is on (OFF Time). During this time, the reaction keeps the pin ISENx
and PGNDS at the same voltage while during the time in which the reading circuitry is off, an internal clamp
keeps these two pins at the same voltage sinking from the ISENx pin the necessary current (Needed if
low-side mosfet RdsON sense is implemented to avoid absolute maximum rating overcome on ISENx pin).
The proprietary current reading circuit allows a very precise and high bandwidth reading for both positive
and negative current. This circuit reproduces the current flowing through the sensing element using a high
speed Track & Hold transconductance amplifier. In particular, it reads the current during the second half
of the OFF time reducing noise injection into the device due to the mosfet turn-on (See fig. 3). Track time
must be at least 200ns to make proper reading of the delivered current.
This circuit sources a constant 100µA current from the PGNDS pin: it must be connected through two
equal Rg resistors to the groundside of the sensing element (See Figure 3). The two current reading cir-
cuitry uses this pin as a reference keeping the ISENx pin to this voltage.
The current that flows in the ISENx pin is then given by the following equation:
IISENx
=
50µA + R-----S----E---N----S---E--------I--P---H----A----S---E----x
Rg
=
50 µA + IINFOx
Where RSENSE is an external sense resistor or the RdsON of the low side mosfet and Rg is the transcon-
ductance resistor used between ISENx and PGNDS pins toward the reading points; IPHASEx is the current
carried by the relative phase. The current information reproduced internally is represented by the second
term of the previous equation as follow:
IINFOx
=
R-----S---E----N----S---E--------I--P---H----A----S---E----x
Rg
11/34

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