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PDF RMBA09501 Data sheet ( Hoja de datos )

Número de pieza RMBA09501
Descripción Cellular 2 Watt Linear GaAs MMIC Power Amplifier
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! RMBA09501 Hoja de datos, Descripción, Manual

May 2004
RMBA09501
Cellular 2 Watt Linear GaAs MMIC Power Amplifier
General Description
The RMBA09501 is a highly linear Power Amplifier. The
two stage circuit uses our pHEMT process. It is designed
for use as a driver stage for Cellular base stations, or as the
output stage for Micro- and Pico-Cell base stations. The
amplifier has been optimized for high linearity requirements
for CDMA operation.
Features
• 2 Watt Linear output power at 36dBc ACPR1 for CDMA
operation
• Small Signal Gain of > 30dB
• Small outline SMD package
Device
Absolute Ratings
Symbol
VDD
VGS
PRF
TC
TS
Parameter
Drain Supply Voltage1
Gate Supply Voltage
RF Input Power (from 50source)
Case Operating Temperature
Storage Temperature
Note:
1. Only under quiescent conditions—no RF applied.
Min Max Units
+10 V
-5 V
+5 dBm
-30 +85
°C
-40 +100 °C
©2004 Fairchild Semiconductor Corporation
RMBA09501 Rev. C

1 page




RMBA09501 pdf
Figure 4. Layout of Test Evaluation Board (RMBA09501-TD, G657471)
Test Procedure for the Evaluation Board (RMBA09501-TB)
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2)
WHILE CORRESPONDING DRAIN VOLTAGES (Vdd)
ARE PRESENT CAN DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test
the amplifier. (It is necessary to add a fan to provide air
cooling across the heat sink of RMBA09501.) Note:
Vdd1, 2 are tied together.
Step 1: Turn off RF input power.
Step 2: Use GND terminal of the evaluation board for the
ground of the DC supplies. Slowly apply gate supply
voltages as specified on results sheet supplied with test
board to the board terminals Vgg1 and Vgg2.
Step 3: Slowly apply drain supply voltages of +7.0V to the
board terminals Vdd1, 2. Adjust Vgg to set the total
quiescent current Idq1 and Idq2 (with no RF applied) Idq
as per supplied result sheet. Gate supply voltages (Vgg
i.e., Vgg1, Vgg2) may be adjusted, only if quiescent
current (Idq1 and Idq2) values desired are different from
those noted on the data summary supplied with product
samples.
Step 4: After the bias condition is established, RF input
signal may now be applied at the appropriate frequency
band and appropriate power level.
Step 5: Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltages Vdd1, 2.
(iii) Turn down and off gate voltages Vgg1 and Vgg2.
©2004 Fairchild Semiconductor Corporation
RMBA09501 Rev. C

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