(PDF) RB160M-90 Datasheet - Schottky barrier diode

Número de pieza	RB160M-90
Descripción	Schottky barrier diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! Diodes Schottky barrier diode RB160M-90 RB160M-90 zApplications General rectification z External dimensions (Unit : mm) 1.6±0.1 0.15±0.03 zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability. 0.9±0.1 0～0.1 0.8±0.1 zConstruction Silicon epitaxial planar ROHM : PMDU JEDEC : SOD-123 ① M製an造ufa年ctu月re Date z Land size figure (Unit : mm) 1.2 PMDU zStructure z Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0.05 0.25±0.05 1.81±0.05 zAbsolute maximum ratings (Ta=25°C) Param eter Revers e voltage (repetitive peak) Revers e voltagec(DC) Average rectified forward current Forward current s urge peak （60Hz・1cyc） Junction tem perature Storage tem perature Mounted on epoxy board. 180°Harf s ine wave Sym bol VRM VR Io IFSM Tj Ts tg 4.0±0.1 φ1.0±0.2 　　　　　0 Lim its 90 90 1 30 150 -40 to +150 Unit V V A A ℃ ℃ 1.05±0.1 zElectrical characteristics (Ta=25°C) Param eter Forward voltage Revers e current Sym bol Min. Typ. Max. VF - - 0.73 IR - - 100 Unit V IF=1.0A µA VR=90V C o n d i ti o n s 1/3 1 page

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PDF RB160M-90 Data sheet ( Hoja de datos )