DataSheet.es    


PDF IAM-92516 Data sheet ( Hoja de datos )

Número de pieza IAM-92516
Descripción High Linearity GaAs FET Mixer
Fabricantes Hewlett-Packard 
Logotipo Hewlett-Packard Logotipo



Hay una vista previa y un enlace de descarga de IAM-92516 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! IAM-92516 Hoja de datos, Descripción, Manual

Agilent IAM-92516 High
Linearity GaAs FET Mixer
Data Sheet
Description
Agilent Technologies’s IAM-92516
is a high linearity GaAs FET Mixer
using 0.5 µm enhancement mode
pHEMT technology. This device
houses in Pb-free and Halogen free
16 pins LPCC 3x3[2] plastic
package. The IAM-92516 has built-
in LO buffer amplifier which
requires -3 dBm LO power to
deliver an input third order
intercept point of 27 dBm. LO port
is 50 ohm matched and can be
driven differential or single ended
while IF port is 200 ohm matched
and fully differential. RF port
requires external matching
network for optimum input return
loss and IIP3 performance.
RF and LO frequency range
coverage from 400 to 3500 MHz
and IF coverage is from DC to 300
MHz. This mixer consumes 26 mA
of current from a single 5V supply.
Conversion loss is typically 6 dB
and noise figure is typically 12.5
dB. Excellent output power at 1 dB
compression of 9 dBm. LO to IF,
LO to RF and RF to IF isolation are
greater than 30 dB.
The IAM-92516 is ideally suited for
frequency up/down conversion for
base station radio card receiver
and transmitter, microwave link
transceiver, MMDS, modulation
and demodulation for receiver and
transmitter and general purpose
resistive FET mixer, which require
high linearity. All devices are 100%
RF and DC tested.
Pin Connections and
Package Marking
Notes:
Package marking provides orientation and
identification
“M3” = Device Code
“X” = Month code indicates the month of
manufacture
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Features
DC = 5V @ 26 mA (Typ.)
RF = 1.91 GHz, PinRF = -10 dBm;
LO = 1.7 GHz, PinLO = -3 dBm;
IF = 210 MHz unlesss otherwise
specified
Lead-free Option Available
High Linearity: 27 dBm IIP3
Conversion Loss: 6 dB typical
Wide band operation: 400-3500
MHz RF & LO input DC 300 MHz
IF output
Fully differential or single ended
operation
High P1dB: 9 dBm typical
Low current consumption: 5V@
26 mA typical
Excellent uniformity in product
specifications
Small LPCC 3.0 x 3.0 x 0.75 mm
package
MTTF > 300 years[1]
MSL-1 and lead-free
Tape-and-Reel packaging option
available
Applications
Frequency up/down converter for
base station radio card, microwave
link transceiver, and MMDS
Modulation and demodulation for
receiver and transmitter
General purpose resistive FET
mixer for other high linearity
applications
Notes:
1. Refer to reliability datasheet for detailed
MTTF data.
2. Conform to JEDEC reference outline
MO229 for DRP-N

1 page




IAM-92516 pdf
IAM-92516 Typical Performance, continued
DC = 5V @ 26 mA, RF =1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm, IF = 210 MHz unless otherwise specified
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40 -20°C
-40°C
-42 +25°C
-44 +85°C
-46
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
LO POWER (dBm)
Figure 10. LO-RF Isolation vs LO Power Over
Temperature.
0
-5
-10
-15
-20
-25
-30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
FREQUENCY (GHz)
Figure 13. LO Return Loss vs Frequency.
-30
-31
-32
-33
-34
-35
-36
-37
-38
-39
-40
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
-20°C
-40°C
+25°C
+85°C
1 2 34
5
LO POWER (dBm)
Figure 11. RF-IF Isolation vs LO Power Over
Temperature.
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
50 100 150 200 250 300 350 400 450 500
FREQUENCY (MHz)
Figure 14. IF Return Loss vs Frequency.
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
FREQUENCY (GHz)
Figure 12. RF Return Loss vs Frequency.
LO Harmonics (nLO)
01 2 3 4 5
0
0
18.5 12.9 11.6
5.8
1 19.5 0
51.3 60.6 42.8 55.2
2 39.9 67.3 56.6 78.3 64.7 87.2
3 51.2 >90 >90 >90 >90 >90
4 68.9 >90 >90 >90 >90 >90
5 >90 >90 >90 >90 >90 >90
Harmonic Intermodulation Suppression[10 ]
Note:
10. Test Conditions of Harmonic Intermodulation Suppression:
a) RF =1.91 GHz @-10 dBm and LO =1.7 GHz @-3 dBm.
b) RF harmonics and intermodulation products are referenced to a desired signal produced by
frequency IF = 210 MHz.
c) LO Harmonics are referenced to the -3 dBm LO drive signal.
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet IAM-92516.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IAM-92516High Linearity GaAs FET MixerHewlett-Packard
Hewlett-Packard
IAM-92516High Linearity GaAs FET MixerAVAGO
AVAGO

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar