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PDF IKW25T120 Data sheet ( Hoja de datos )

Número de pieza IKW25T120
Descripción IGBT
Fabricantes Infineon Technologies 
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No Preview Available ! IKW25T120 Hoja de datos, Descripción, Manual

TrenchStop® Series
IKW25T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP314D
Short circuit withstand time – 10s
Designed for :
G
E
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW25T120 1200V 25A
1.7V
150C K25T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-247-3
Value
1200
50
25
75
75
50
25
75
20
10
190
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.3 12.06.2013

1 page




IKW25T120 pdf
TrenchStop® Series
IKW25T120
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=150C
VCC=600V,IC=25A,
VGE=0/15V,
RG= 22,
L1)=180nH,
C1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=600V, IF=25A,
diF/dt=800A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
50
32
660
130
3.0
4.0
7.0
320
5.2
29
320
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
5
Rev. 2.3 12.06.2013

5 Page





IKW25T120 arduino
TrenchStop® Series
IKW25T120
VCE
600V
60A 60A
600V
400V
200V
40A 40A
IC
20A 20A
400V
200V
IC
0V
0us
0.5us
1us
t, TIME
1.5us
0A
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=22Ω, Tj = 150C,
Dynamic test circuit in Figure E)
VCE
0A
0us
0.5us
1us
1.5us
0V
t, TIME
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=22Ω, Tj = 150C,
Dynamic test circuit in Figure E)
D=0.5
10-1K/W
0.2
0.1
0.05
10-2K/W
0.02
R,(K/W)
0.01
0.229
0.192
single pulse 0.174
0.055
R1
, (s)
1.10*10-1
1.56*10-2
1.35*10-3
1.52*10-4
R2
10-3K/W
10µs
100µs
C1=1/R1 C2=2/R2
1ms 10ms 100ms
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
100K/W
D=0.5
0.2
0.1
10-1K/W
0.05
0.02
0.01
R,(K/W)
0.282
0.317
0.294
0.107
R1
, (s)
1.01*10-1
1.15*10-2
1.30*10-3
1.53*10-4
R2
10-2K/W
10µs
single pulse
C1=1/R1 C2=2/R2
100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
IFAG IPC TD VLS
11
Rev. 2.3 12.06.2013

11 Page







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