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Número de pieza | K4S511632D | |
Descripción | DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL | |
Fabricantes | Samsung semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K4S511632D (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! K4S511632D
CMOS SDRAM
DDP 512Mbit SDRAM
8M x 16bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
July. 2002
This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM
products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,
work stations or desk top personal computers (hereinafter "Prohibited Computer Use"). Applications such as mobile, including cell phones,
telecom, including televisions and display monitors, or non-desktop computer systems, including laptops, notebook computers, are ,
however, permissible. "Multi-Die Plastic" is defined as two or more Dram die encapsulated within a single plastic leaded package
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 July. 2002
1 page K4S511632D
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VI N, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
2
50
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70° C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
VDD, VDDQ
VIH
V IL
VOH
V OL
ILI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ Max Unit
3.3 3.6
V
3.0 VDD +0.3
V
0 0.8 V
- -V
- 0.4 V
- 10 uA
Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ .
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Clock
RAS, CAS , WE, DQM
Address, CS,CKE
D Q0 ~ DQ8
Symbol
CCLK
C IN
CADD
COUT
Min
5.0
5.0
5.0
4.0
Max
9.0
10.0
10.0
6.5
Unit
pF
pF
pF
pF
Note
Rev. 0.0 July. 2002
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet K4S511632D.PDF ] |
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