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PDF IRFP240 Data sheet ( Hoja de datos )

Número de pieza IRFP240
Descripción N-Channel Power MOSFET / Transistor
Fabricantes Intersil Corporation 
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Data Sheet
IRFP240
July 1999 File Number 2087.4
20A, 200V, 0.180 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17422.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP240
TO-247
IRFP240
NOTE: When ordering, include the entire part number.
Features
• 20A, 200V
• rDS(ON) = 0.180
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-317
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 page




IRFP240 pdf
IRFP240
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
3000
2400
1.05 1800
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS
COSS
=
CGD
CDS
+
CGD
0.95
1200
COSS
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
600 CRSS
0
12
5 10 20
50 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
9
6
TJ = 25oC
TJ = 150oC
3
0
0 6 12 18 24 30
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 150oC
1
0.1
0
TJ = 25oC
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 18A
16
12
8
4
VDS = 40V
VDS = 100V
VDS = 160V
0
0
12 24 36
48 60
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-321

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