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Número de pieza | 2SC6033 | |
Descripción | TOSHIBA Transistor Silicon NPN Epitaxial Type | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC6033 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6033
High-Speed Swtching Applications
DC-DC Converter Applications
Storobe Flash Applications
TSM
2SC6033
Unit : mm
+0.2
2.8-0.3
+0.2
1.6-0.1
• High DC current gain: hFE = 250 to 400 (IC = 0.3 A)
• Low collector-emitter saturation: VCE (sat) = 0.18 V (max)
• High-speed switching: tf = 38 ns (typ.)
1
23
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
DC
Pulse
t = 10s
DC
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
Pc (Note 1)
100
80
50
6
2.5
5
0.3
1.00
0.625
V
V
V
V
A
A
W
1. Base
2. Emitter
3. Collector
JEDEC
JEITA
TOSHIBA
-
-
2-3-S1A
Weight: 0.01g (Typ.)
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm2)
1 2004-07-01
1 page 2SC6033
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
030619EAA
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5 2004-07-01
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 2SC6033.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC603 | 2SC603 | ETC |
2SC6033 | TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor |
2SC6034 | Silicon NPN Triple Diffused Type | Toshiba Semiconductor |
2SC6036 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
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