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Número de pieza | 2SB1699 | |
Descripción | Silicon PNP Epitaxial Transistor | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB1699 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Transistors
2SB1699
Silicon PNP epitaxial planar type
For power amplification
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−60
−60
−6
−2
−4
1
150
−55 to +150
V
V
V
A
A
W
°C
°C
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
0.4±0.04
3.0±0.15
45˚
Marking Symbol: 3A
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
Turn-on time
Storage time
Fall time
Transition frequency
VCEO
ICBO
ICEO
hFE1
hFE2
hFE3
VCE(sat)
ton
tstg
tf
fT
IC = −1 mA, IB = 0
VCB = −60 V, IE = 0
VCE = −60 V, IB = 0
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = − 0.2 A
VCE = −4 V, IC = −2 A
IC = −2 A, IB = −250 mA
IC = −1 A, IB1 = 0.1 A
IB2 = − 0.1 A, VCC = −50 V
VCB = −10 V, IE = 50 mA, f = 200 MHz
−60
80
60
30
−100
−100
250
− 0.5
0.2
0.4
0.1
180
V
µA
µA
V
µs
µs
µs
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: April 2004
SJC00304AED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SB1699.PDF ] |
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