DataSheet.es    


PDF 2SB1699 Data sheet ( Hoja de datos )

Número de pieza 2SB1699
Descripción Silicon PNP Epitaxial Transistor
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de 2SB1699 (archivo pdf) en la parte inferior de esta página.


Total 3 Páginas

No Preview Available ! 2SB1699 Hoja de datos, Descripción, Manual

Transistors
2SB1699
Silicon PNP epitaxial planar type
For power amplification
Features
Low collector-emitter saturation voltage VCE(sat)
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
60
6
2
4
1
150
55 to +150
V
V
V
A
A
W
°C
°C
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
1
0.4±0.08
1.5±0.1
23
0.5±0.08
0.4±0.04
3.0±0.15
45˚
Marking Symbol: 3A
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
Turn-on time
Storage time
Fall time
Transition frequency
VCEO
ICBO
ICEO
hFE1
hFE2
hFE3
VCE(sat)
ton
tstg
tf
fT
IC = −1 mA, IB = 0
VCB = −60 V, IE = 0
VCE = −60 V, IB = 0
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = − 0.2 A
VCE = −4 V, IC = −2 A
IC = −2 A, IB = −250 mA
IC = −1 A, IB1 = 0.1 A
IB2 = − 0.1 A, VCC = −50 V
VCB = −10 V, IE = 50 mA, f = 200 MHz
60
80
60
30
100
100
250
0.5
0.2
0.4
0.1
180
V
µA
µA
V
µs
µs
µs
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: April 2004
SJC00304AED
1

1 page





PáginasTotal 3 Páginas
PDF Descargar[ Datasheet 2SB1699.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2SB1690TransistorsROHM Semiconductor
ROHM Semiconductor
2SB1690KTransistorsROHM Semiconductor
ROHM Semiconductor
2SB1693Silicon PNP Epitaxial TransistorPanasonic Semiconductor
Panasonic Semiconductor
2SB1694General purpose amplification ( 30V/1A)ROHM Semiconductor
ROHM Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar