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PDF 2SA2080 Data sheet ( Hoja de datos )

Número de pieza 2SA2080
Descripción SILICON PNP EPITAXIAL
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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No Preview Available ! 2SA2080 Hoja de datos, Descripción, Manual

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

1 page




2SA2080 pdf
Maximum Collector Dissipation Curve
150
100
50
*Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
0 50 100
150
Ambient Temperature Ta (°C)
2SA2080
Typical Output Characteristics (1)
10
25
8
20
6 15
4 10
2 5 µA
IB = 0
0 0.2 0.4 0.6 0.8 1.0
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
10
Pulse test
25
20
8
15
6
10
4
5 µA
2
IB = 0
0 5 10 15 20 25
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
5
VCE = 5 V
4
3
Ta = 75°C
25
2
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Rev.0, Feb. 2002, page 3 of 6

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