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PDF UPA2754GR Data sheet ( Hoja de datos )
| Número de pieza | UPA2754GR | |
| Descripción | SWITCHING N- AND P-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2754GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2754GR is Dual N-channel MOS Field Effect
Transistor designed for Li-ion battery protection circuit
and power management application.
FEATURES
• Dual chip type
• Low on-state resistance
RDS(on)1 = 14.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A)
RDS(on)2 = 15.0 mΩ MAX. (VGS = 4.0 V, ID = 5.5 A)
RDS(on)4 = 18.6 mΩ MAX. (VGS = 2.5 V, ID = 5.5 A)
• Low Ciss: Ciss = 1940 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µPA2754GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note2
Drain Current (pulse) Note1
Total Power Dissipation (2 units) Note2
Total Power Dissipation (1 unit) Note2
VGSS
ID(DC)
ID(pulse)
PT
PT
±12
±11
±88
2.0
1.7
V
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to +150
°C
IAS 11
A
EAS 12.1 mJ
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. TA = 25°C, Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 12 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G15816EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2001
1 page  
µPA2754GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
20 VGS = 2.5 V
3.1 V
4.5 V
15
10
5
0
-50
0 50 100
Tch - Channel Temperature - °C
150
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
SWITCHING CHARACTERISTICS
VDD = 15 V
VGS = 4.5 V
RG = 10 Ω
100
10
tr
td(off)
tf
td(on)
1
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 8
30
20
10
0
0
VDD = 24 V
15 V
6.0 V
6
VGS 4
2
VDS
ID = 11 A
0
10 20 30
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
VGS = 0 V
1
0.1
0.01
0
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet G15816EJ1V0DS
5
5 Page | ||
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| PDF Descargar | [ Datasheet UPA2754GR.PDF ] | |
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