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PDF UPA2782GR Data sheet ( Hoja de datos )

Número de pieza UPA2782GR
Descripción SWITCHING N- AND P-CHANNEL POWER MOS FET
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2782GR
SWITCHING
N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DESCRIPTION
The µPA2782GR is N-Channel Power MOSFET, which built a
Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter
application.
FEATURES
Built a Schottky Barrier Diode
Low on-state resistance
RDS(on)1 = 11 mTYP. (VGS = 10 V, ID = 5.5 A)
RDS(on)2 = 16 mTYP. (VGS = 4.5 V, ID = 5.5 A)
RDS(on)3 = 19 mTYP. (VGS = 4.0 V, ID = 5.5 A)
Low Ciss: Ciss = 660 pF TYP.
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA2782GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 ; Source
4 ; Gate
5, 6, 7, 8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS 30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) [MOSFET]
Drain Current (pulse) Note1
Average Forward Current Note2 [SCHOTTKY]
Total Power Dissipation Note3 [MOSFET]
Total Power Dissipation Note3 [SCHOTTKY]
ID(DC)
ID(pulse)
IF(AV)
PT
PT
±11
±44
2.5
2
1
A
A
A
W
W
Channel & Junction Temperature
Tch, Tj
150
°C
Storage Temperature
Tstg 55 to + 150
Notes 1. PW 10 µs, Duty Cycle 1%
2. Rectangle wave, 50% Duty Cycle
3. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
°C
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Source
Schottky
Diode
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16421EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2002

1 page




UPA2782GR pdf
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
Pulsed
35
30
25 VGS = 4.0 V
20 4.5 V
15
10 V
10
5
0
- 50 0 50 100 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
VDD = 15 V
VGS = 10 V
RG = 10
100
td(off)
10 td(on)
tf
tr
1
0.1
1
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
125°C
TA = 25°C
10
1
0.1
0
VGS = 0 V
Pulsed
0.2 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
µPA2782GR
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
C iss
100
C oss
C rss
10
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 6
ID = 11 A
25 VDD = 24 V
15 V
6V
20
5
4
VGS
15 3
10 2
VDS
51
00
02468
QG - Gate Charge - nC
100000
SOURCE TO DRAIN DIODE
REVERSE CURRENT
10000
1000
100
VDS = 30 V
10
1
0.1 24 V
0.01
- 50
0 50 100
Tj - Junction Temperature - °C
150
Data Sheet G16421EJ1V0DS
5

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