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PDF UPA2700TP Data sheet ( Hoja de datos )
| Número de pieza | UPA2700TP | |
| Descripción | SWITCHING N- AND P-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2700TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2700TP which has a heat spreader is N-Channel
MOS Field Effect Transistor designed for DC/DC converter
and power management application of notebook computer.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3
; Source
4 ; Gate
5, 6, 7, 8, 9 ; Drain
FEATURES
• Low on-state resistance
RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A)
RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)
• Low Ciss: Ciss = 2600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8)
ORDERING INFORMATION
PART NUMBER
µPA2700TP
PACKAGE
Power HSOP8
14
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
14
0.12 M
2.0 ±0.2
9
4.1 MAX.
85
0.10 S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
5 Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (DC) (TA = 25°C) Note1
Drain Current (pulse) Note2
VGSS
ID(DC)1
ID(DC)2
ID(pulse)
±20
±42
±20
±120
V
A
A
A
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Note1
PT1 37
PT2 3
W
W
Gate
Body
Diode
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg –55 to + 150 °C
IAS 22
A
EAS 48.4 mJ
Source
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15851EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2002
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
15
10 VGS = 4 V
4.5 V
5 10 V
0
−50 −25 0 25 50 75 100 125 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss
Coss
Crss
VGS = 0 V
10 f = 1 MHz
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1
1 10
ID - Drain Current - A
100
µPA2700TP
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = 0 V
10
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source to Drain Voltage - V
1.4
1000
SWITCHING CHARACTERISTICS
100
10
td(off)
tr
tf
td(on)
VDD = 15 V
VGS = 10 V
1 RG = 10 Ω
0.1
1
10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 8
35
30 VDD = 24 V
15 V
25 6 V
VGS
7
6
5
20 4
15 3
10 2
5 VDS
1
ID = 17 A
00
0 4 8 12 16 20 24 28 32 36 40
QG - Gate Charge - nC
Data Sheet G15851EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA2700TP.PDF ] | |
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