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PDF UPA2701GR Data sheet ( Hoja de datos )

Número de pieza UPA2701GR
Descripción SWITCHING N- AND P-CHANNEL POWER MOS FET
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No Preview Available ! UPA2701GR Hoja de datos, Descripción, Manual

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2701GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2701GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Low on-state resistance
RDS(on)1 = 7.5 mMAX. (VGS = 10 V, ID = 7.0 A)
RDS(on)2 = 11.6 mMAX. (VGS = 4.5 V, ID = 7.0 A)
Low Ciss: Ciss = 1200 pF TYP. (VDS = 10 V, VGS = 0 V)
Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 ; Source
4 ; Gate
5, 6, 7, 8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
ORDERING INFORMATION
PART NUMBER
µPA2701GR
PACKAGE
Power SOP8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
±14
±56
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg –55 to +150 °C
IAS 14
A
EAS 19.6 mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 , L = 100 µH, VGS = 20 0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is extemally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15714EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
2002

1 page




UPA2701GR pdf
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
15
VGS = 4 V
4.5 V
10
10 V
5
0
50 25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
Coss
Crss
VGS = 0 V
10 f = 1 MHz
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Drain Current - A
100
µPA2701GR
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = 0 V
10
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0
VSD - Source to Drain Voltage - V
1.2
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
tr
td(on)
VDD = 15 V
VGS = 10 V
RG = 10
1
0.1
1
10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 8
35
30 VDD = 24 V
15 V
25 6 V
20
7
6
5
VGS 4
15 3
10 2
5 VDS
1
ID = 14 A
00
0 2 4 6 8 10 12 14 16 18 20
QG - Gate Charge - nC
Data Sheet G15714EJ2V0DS
5

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