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PDF UPA2706GR Data sheet ( Hoja de datos )
| Número de pieza | UPA2706GR | |
| Descripción | SWITCHING N- AND P-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2706GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2706GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
• Low on-state resistance
RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A)
RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A)
• Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA2706GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 ; Source
4 ; Gate
5, 6, 7, 8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected)
Drain to Source Voltage (VGS = 0 V)
VDSS
30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
±11 A
±44 A
2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to + 150 °C
IAS 11 A
EAS 12.1 mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16236EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2003
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
Pulsed
35
30
25 VGS = 4.0 V
20 4.5 V
15
10 V
10
5
0
- 50 0 50 100 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
VDD = 15 V
VGS = 10 V
RG = 10 Ω
100
td(off)
10 td(on)
tf
tr
1
0.1
1
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = 10 V
10
0V
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
µPA2706GR
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
0.01 0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 6
ID = 11 A
25 VDD = 24 V
15 V
6V
20
5
4
VGS
15 3
10 2
VDS
51
00
02468
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
VGS = 0 V
di/dt = 100 A/µs
100
10
1
1 10
IF - Diode Forward Current - A
100
Data Sheet G16236EJ1V0DS
5
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