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PDF MRF422 Data sheet ( Hoja de datos )
| Número de pieza | MRF422 | |
| Descripción | RF POWER TRANSISTORS NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz.
• Specified 28 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
• Intermodulation Distortion @ 150 W (PEP) —
IMD = – 30 dB (Min)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Order this document
by MRF422/D
MRF422
150 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstanding Current — 10 s
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C)
V(BR)CBO
V(BR)EBO
ICES
Symbol
VCEO
VCBO
VEBO
IC
—
PD
Tstg
Symbol
RθJC
Min
35
85
85
3.0
—
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 211–11, STYLE 1
Value
40
85
3.0
20
30
290
1.66
– 65 to +150
Max
0.6
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— — Vdc
— 20 mAdc
(continued)
MRF422
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MRF422.PDF ] | |
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