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PDF MRF455 Data sheet ( Hoja de datos )
| Número de pieza | MRF455 | |
| Descripción | RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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1. MRF455  Hay una vista previa y un enlace de descarga de MRF455 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF455/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 30 MHz.
• Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 60 Watts
Minimum Gain = 13 dB
Efficiency = 55%
MATCHING PROCEDURE
In the push–pull circuit configuration it is preferred that the transistors are
used as matched pairs to obtain optimum performance.
The matching procedure used by Motorola consists of measuring hFE at the
data sheet conditions and color coding the device to predetermined hFE ranges
within the normal hFE limits. A color dot is added to the marking on top of the cap.
Any two devices with the same color dot can be paired together to form a
matched set of units.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
PD
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
Characteristic
Thermal Resistance, Junction to Case
Value
18
36
4.0
15
175
1.0
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
RθJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
Min
18
36
4.0
10
—
MRF455
60 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–07, STYLE 1
Max Unit
1.0 °C/W
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 150 —
— 250 pF
(continued)
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF455
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MRF455.PDF ] | |
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