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PDF C5552 Data sheet ( Hoja de datos )
| Número de pieza | C5552 | |
| Descripción | NPN Transistor - 2SC5552 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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2SC5552
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide area of safe operation (ASO)
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
1 700
1 700
600
7
30
16
8
65
3.5
150
−55 to +150
Unit
V
V
V
V
A
A
A
W
°C
°C
Unit: mm
15.5±0.5 φ 3.2±0.1
5°
3.0±0.3
5°
(4.0)
2.0±0.2
5°
5°
5°
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5°
12 3
1: Base
2: Collector
3: Emitter
TOP-3E Package
Marking Symbol: C5552
Internal Connection
C
B
E
I Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 8 A
IC = 8 A, IB = 2 A
IC = 8 A, IB = 2 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IC = 8 A, Resistance loaded
IB1 = 2 A, IB2 = −4 A
Min Typ Max Unit
50 µA
1 mA
50 µA
6 12
3V
1.5 V
3 MHz
3.0 µs
0.2 µs
1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet C5552.PDF ] | |
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