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PDF UF28150J Data sheet ( Hoja de datos )
| Número de pieza | UF28150J | |
| Descripción | MOSFET Power Transistor | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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UF28150J PRELIMINARY
POWER MOSFET TRANSISTOR
150 WATTS, 100 - 500 MHz, 28 V
FEATURES
• N-Channel Enhancement Mode Device
• Applications
• 150 Watts CW
• Common Source Gemini Configuration
• RESFET Structure
• Internal Input Impedance Matching
• Gold Metallization
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Symbol Rating
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
20
Drain-Source Current
IDS 28
Dissipation @25°C
PD 233
Storage Temperature
Tstg -55 to +150
Junction Temperature
Tj 200
Thermal Resistance
θjc 0.75
Units
V
V
A
W
°C
°C
°C/W
OUTLINE DRAWING
ELECTRICAL CHARACTERISTICS AT 25°C (*per side)
Parameter
Drain-Source Breakdown
Voltage
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Reverse Capacitance
Output Capacitance
Power Gain
Collector Efficiency
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Gm
CISS
CRSS
COSS
GP
η
Min
60
-
-
2.0
1.0
10
50
Max
-
4.0
2.0
6.0
-
200
50
14
-
-
Load Mismatch Tolerance
VSWR
-
3.0:1
TYPICAL OPTIMUM DEVICE IMPEDANCE
F (MHz)
935
Z in (Ω)
4.6 + j8.0
Z load (Ω)
2.3 + j3.1
960
4.7 + j7.8
2.4 + j3.1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
ID=40 mA, VGS=0.0 V*
VDS=28.0 V, VGS=0.0 V*
VGS=20 V, VDS=0.0 V*
VDS=10.0 V, IDS=200 mA*
VDS=10.0 V, IDS=2000 mA (pulsed)*
VDS=28.0 V, f=1.0 MHz (Reference Only)*
VDS=28.0 V, f=1.0 MHz*
VDS=28.0 V, f=1.0 MHz*
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
M/A-COM POWER TRANSISTORS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501
(310) 320-6160 • FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
1 page | ||
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