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PDF MRF650 Data sheet ( Hoja de datos )
| Número de pieza | MRF650 | |
| Descripción | RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
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Hay una vista previa y un enlace de descarga de MRF650 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF650/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 520 MHz.
• Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics
Output Power = 50 Watts
Minimum Gain = 5.2 dB @ 440, 470 MHz
Efficiency = 55% @ 440, 470 MHz
IRL = 10 dB
• Characterized with Series Equivalent Large–Signal Impedance Parameters
from 400 to 520 MHz
• Built–In Matching Network for Broadband Operation
• Triple Ion Implanted for More Consistent Characteristics
• Implanted Emitter Ballast Resistors
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at all Phase Angles with 20:1
VSWR @ 15.5 Vdc, 2.0 dB Overdrive
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
TJ
Symbol
RθJC
Min
16.5
38
4.0
—
20
—
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF650
50 W, 512 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
Value
16.5
38
4.0
12
135
0.77
– 65 to +150
200
Max
1.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 5.0 mAdc
70 120 —
135 170
pF
(continued)
MRF650
1
1 page  
PACKAGE DIMENSIONS
D
R
F
4
3
K
Q
J
E
1
2
L
B
H
A
C
N
U
CASE 316–01
ISSUE D
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
INCHES
DIM MIN MAX
A 24.38 25.14
B 12.45 12.95
C 5.97 7.62
D 5.33 5.58
E 2.16 3.04
F 5.08 5.33
H 18.29 18.54
J 0.10 0.15
K 10.29 11.17
L 3.81 4.06
N 3.81 4.31
Q 2.92 3.30
R 3.05 3.30
U 11.94 12.57
MILLIMETERS
MIN MAX
0.960 0.990
0.490 0.510
0.235 0.300
0.210 0.220
0.085 0.120
0.200 0.210
0.720 0.730
0.004 0.006
0.405 0.440
0.150 0.160
0.150 0.170
0.115 0.130
0.120 0.130
0.470 0.495
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE
MOTOROLA RF DEVICE DATA
MRF650
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MRF650.PDF ] | |
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