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Número de pieza | IRFP440 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFP440 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
IRFP440
July 1999 File Number 2089.3
8.8A, 500V, 0.850 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17425.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP440
TO-247
IRFP440
NOTE: When ordering, include the entire part number.
Features
• 8.8A, 500V
• rDS(ON) = 0.850Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-347
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page IRFP440
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
1800
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
1200
600
COSS
CRSS
01 2
5 10 20
50 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
12
9
6
TJ = 25oC
TJ = 150oC
3
0
0 3 6 9 12 15
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
102
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 150oC
1
0.1
0
TJ = 25oC
0.3 0.6 0.9 1.2
VSD, SOURCE TO DRAIN VOLTAGE (V)
1.5
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 8A
16
12
8
4
VDS = 100V
VDS = 250V
VDS = 400V
0
0 12 24 36 48 60
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-351
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRFP440.PDF ] |
Número de pieza | Descripción | Fabricantes |
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