(PDF) TAN250A Datasheet - RF Power Transistor

Número de pieza	TAN250A
Descripción	RF Power Transistor
Fabricantes	ASI
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No Preview Available ! RF POWER TRANSISTOR TAN250A DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching MAXIMUM RATINGS IC 30 A VCB PDISS 60 V 575 W @ TC = 25 OC TJ T STG θ JC -65 OC to +200 OC -65 OC to +200 OC 0.30 OC/W PACKAGE STYLE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCBO IC = 20 mA BVCES IC = 25 mA RBE = 10 Ω BVEBO IE = 20 mA ICBO VCB = 50 V hFE VCE = 5 V IC = 1.0 A MINIMUM TYPICAL MAXIMUM 60 60 4.0 12 20 120 UNITS V V V mA --- POUT P G ηC VCC = 50 V PIN = 13 W f = 960 to 1215 MHz Pulse Width = 20 µS Duty Cycle = 5 % 250 6.0 7.0 40 W dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF TAN250A Data sheet ( Hoja de datos )