DataSheet.es    


PDF GT60M323 Data sheet ( Hoja de datos )

Número de pieza GT60M323
Descripción Silicon N Channel IGBT
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



Hay una vista previa y un enlace de descarga de GT60M323 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! GT60M323 Hoja de datos, Descripción, Manual

GT60M323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M323
Voltage Resonance Inverter Switching Application
Enhancement mode type
High speed
: tf = 0.09 µs (typ.) (IC = 60 A)
Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)
FRD included between emitter and collector
TO-3P(LH) (Toshiba package name)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector @ Tc = 100°C
current
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Rating
900
±25
31
60
120
15
120
80
200
150
55 to 150
Unit
V
V
A
A
A
W
°C
°C
Max
0.625
4.0
Unit
°C/W
°C/W
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Equivalent Circuit
Collector
Gate
Emitter
Marking
TOSHIBA
GT60M323
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2004-07-06

1 page




GT60M323 pdf
ICmax – Tc
70
Common emitter
60 VGE = 15 V
50
40
30
20
10
0
25 50 75 100 125 150
Case temperature Tc (°C)
GT60M323
102
Tc = 25°C
101
100
Rth (t) – tw
Diode stage
IGBT stage
101
102
105
104
103
102
101
100
101
102
Pulse width tw (s)
100
Common
collector
80
IF – VF
60
40
Tc = 125°C
20
25
40
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage VF (V)
1.6
Common Collector
di/dt = −20 A/µs
Tc = 25°C
1.4
trr, Irr – IF
1.2
trr
Irr
18
16
14
1.0 12
0.8 10
0 20 40 60 80
Forward current IF (A)
1.6
trr
1.2
trr, Irr – di/dt
Common collector
IF = 60 A
Tc = 25°C
80
60
0.8 40
0.4
Irr
0.0
0 40
20
0
80 120 160 180
di/dt (A/µs)
5
2004-07-06

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet GT60M323.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
GT60M322Silicon N Channel IGBTToshiba
Toshiba
GT60M323Silicon N Channel IGBTToshiba
Toshiba
GT60M324SILICON N CHANNEL IGBTToshiba
Toshiba

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar