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PDF STD12N10L Data sheet ( Hoja de datos )
| Número de pieza | STD12N10L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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® STD12N10L
N - CHANNEL 100V - 0.12 Ω - 12A TO-252
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
VDSS
RDS(o n)
ID
STD12N10L
100 V < 0.15 Ω
12 A
s TYPICAL RDS(on) = 0.12 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s LOW THRESHOLD DRIVE
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BG, LAMPDRIVERS, Etc.)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
VG S
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage T emperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1999
Va l u e
100
100
± 15
12
8
48
50
0.33
-65 to 175
175
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/9
1 page  
DIM.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
STD12N10L
TO-252 (DPAK) MECHANICAL DATA
MIN.
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
6.4
4.4
9.35
0.6
mm
TYP.
0.8
MAX.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
6.6
4.6
10.1
1
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
0.023
inch
TYP.
0.031
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
H
DETAIL ”A”
L2 D
DETAIL ”A”
L4
0068772-B
5/9
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STD12N10L.PDF ] | |
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