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PDF STD16NF06L Data sheet ( Hoja de datos )

Número de pieza STD16NF06L
Descripción N-CHANNEL POWER MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STD16NF06L Hoja de datos, Descripción, Manual

STD16NF06L
N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STD16NF06L
60 V < 0.070 24 A
TYPICAL RDS(on) = 0.060
LOGIC LEVEL DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
Figure 1:Package
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
Figure 2: Internal Schematic Diagram
APPLICATIONS
SWITCHING APPLICATIONS
Table 2: Order Codes
SALES TYPE
STD16NF06LT4
STD16NF06L-1
MARKING
D16NF06L
D16NF06L
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
March 2005
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
Value
60
60
± 18
24
17
96
40
0.27
11.5
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 16A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 20A, VDD= 48V
Rev. 3.0
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STD16NF06L pdf
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
STD16NF06L
Figure 12: Normalized on Resistance vs Temperature
Figure 13: Source-drain Diode Forward
Characteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature.
..
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STD16NF06L arduino
STD16NF06L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners.
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America.
www.st.com
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