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PDF TA449xxW Data sheet ( Hoja de datos )
| Número de pieza | TA449xxW | |
| Descripción | Asymmetric Thyristor | |
| Fabricantes | Dynex Semiconductor | |
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Replaces March 1998 version, DS4681-4.1
TA449..W
TA449..W
Asymmetric Thyristor
Advance Information
DS4681-5.0 January 2000
APPLICATIONS
s UPS
s Induction Heating
s A.C. Motor Drives
s Switch Mode Power Supplies
s Choppers
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dVdt
1400V
400A
4000A
1000V/µs
dI/dt
1000A/µs
tq 10.0µs
FEATURES
s Low Loss Asymmetrical Diffusion Structure
s Fully Characterised For Operation up to 20kHz
s High dI/dt and dV/dt ratings
VOLTAGE RATINGS
Type Number
TA449 14 W
TA449 12 W
TA449 10 W
Repetitive Peak
Off-state Voltage
V
DRM
V
1400
1200
1000
Lower voltage grades available.
Repetitive Peak
Reverse Voltage
V
RRM
V
10
10
10
CURRENT AND SURGE RATINGS
Outline type code: MU86.
See Package Details for further information.
Symbol
Parameter
Double Side Cooled
IT(AV)
I
T(RMS)
Mean on-state current
RMS value
I Surge (non-repetitive) on-state current
TSM
I2t I2t for fusing
Conditions
Half sine wave, duty cycle 50%,
T = 80oC, T = 125˚C.
case
j
T = 125oC, t = 1ms, V = 0
j pR
t
p
≥
10ms
Max. Units
255 A
400 A
4000
A
80 x 103 A2s
1/12
1 page  
TA449..W
Notes:
1. VD ≤ 600V.
2. VR = 1V.
3. R.C. snubber. C = 0.22µF, R = 4.7Ω.
4. Double side cooled.
Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C.
Notes:
1. dI/dt = 25A/µs.
2. VD ≤ 600V.
3. VR = 1V.
4. R.C. snubber. C = 0.22µF, R = 4.7Ω.
5. Double side cooled.
Fig.4 Energy per pulse for trapezoidal pulses
5/12
5 Page 
TA449..W
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes 3.6 x 2.0 deep
(in both electrodes)
6.3
Cathode tab
Cathode
Ø 42 max
Ø19nom
Ø1.5
Gate
Ø19nom
Ø 38 max
Anode
Nominal weight: 50g
Clamping force: 3.5kN ±10%
Lead length: 250mm
Package outine type code: MU86
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
Gate triggering and the use of gate characteristics
Recommendations for clamping power semiconductors
The effect of temperature on thyristor performance
Thyristor and diode measurement with a multi-meter
Turn-on performance of thyristors in parallel
Use of V , r on-state characteristic
TO T
Application Note
Number
AN4506
AN4840
AN4839
AN4870
AN4853
AN4999
AN5001
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TA449xxW.PDF ] | |
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