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PDF IRG4BC20MD Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC20MD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD -94115
IRG4BC20MD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
Fast IGBT
Features
• Rugged: 10µsec short circuit capable at VGS=15V
• Low VCE(on) for 4 to 10kHz applications
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
• Industry standard TO-220AB package
Benefits
• Offers highest efficiency and short circuit
capability for intermediate applications
• Provides best efficiency for the mid range frequency
(4 to 10kHz)
• Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
tsc
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 11A
TO-220AB
Max.
600
18
11
36
36
7.0
10
36
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
2.1
2.5
------
80
------
Units
°C/W
g (oz)
1
3/6/01
1 page  
800 VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600
Cies
400
200
0
1
Coes
Cres
10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC20MD
20
VCC = 400V
I C = 11A
16
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.5
VCC= 480V
VGE = 15V
TJ = 25°C
I C= 11A
2.4
100
RG = 50Ω
VGE = 15V
VCC= 480V
10
1
IC = 22A
IC = 11A
IC = 5.5A
2.3
0
10 20 30 40
RG, Gate Resistance ( Ω)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC20MD.PDF ] | |
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