|
|
PDF IRG4BC20MD-S Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC20MD-S | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRG4BC20MD-S (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
PD -94116
IRG4BC20MD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
Fast IGBT
Features
• Rugged: 10µsec short circuit capable at VGS=15V
• Low VCE(on) for 4 to 10kHz applications
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
• Industry standard D2Pak package
Benefits
• Offers highest efficiency and short circuit
capability for intermediate applications
• Provides best efficiency for the mid range frequency
(4 to 10kHz)
• Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
tsc
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 11A
D2Pak
Max.
600
18
11
36
36
7.0
10
36
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
2.1
2.5
------
80
------
Units
°C/W
g (oz)
1
3/6/01
1 page  
800 VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600
Cies
400
200
0
1
Coes
Cres
10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC20MD-S
20
VCC = 400V
I C = 11A
16
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.5
VCC= 480V
VGE = 15V
TJ = 25°C
I C= 11A
2.4
100
RG = 50Ω
VGE = 15V
VCC= 480V
10
1
IC = 22A
IC = 11A
IC = 5.5A
2.3
0
10 20 30 40
RG, Gate Resistance ( Ω)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page 
IRG4BC20MD-S
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1 .6 0 (.06 3)
1 .5 0 (.05 9)
1 1.6 0 (.45 7)
1 1.4 0 (.44 9)
15.4 2 (.60 9)
15.2 2 (.60 1)
1.75 (.069)
1.25 (.049)
16 .10 (.63 4)
15 .90 (.62 6)
0.3 68 (.01 45 )
0.3 42 (.01 35 )
2 4.30 (.9 5 7)
2 3.90 (.9 4 1)
4.72 (.1 3 6)
4.52 (.1 7 8)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
2 7.40 (1.079)
2 3.90 (.941)
4
330 .00
(14.173)
MAX.
60.00 (2.3 62)
MIN .
NOTES :
1. C OM F OR MS TO EIA-418.
2. C ON TR O LLING DIM ENS IO N: M ILLIM ETER .
3. D IME NSIO N M EAS URE D @ HUB .
4. IN CLU DE S F LAN GE DISTO RT IO N @ O U TER E DG E.
26 .40 (1.039)
24 .40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
www.irf.com
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC20MD-S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRG4BC20MD-S | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
| IRG4BC20MD-SPBF | INSULATED GATE BIPOLAR TRANSISTOR |  International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |