|
|
Número de pieza | IRGPF20F | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | IRF | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRGPF20F (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Previous Datasheet
Index
Next Data Sheet
INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.1025
IRGPF20F
Fast Speed IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 900V
VCE(sat) ≤ 4.3V
@VGE = 15V, IC = 5.3A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
900
9.0
5.3
18
18
±20
5.0
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-249
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
2.1
—
40
—
Units
°C/W
g (oz)
Revision 0
To Order
1 page Previous Datasheet
Index
Next Data Sheet
IRGPF20F
500
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
400 Coes = Cce + C gc
Cies
300
Coes
200
Cres
100
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
I C = 5.3A
16
12
8
4
0
0 2 4 6 8 10
Q g , Total G ate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
12
0 .6 2
VC C = 720V
VG E = 15V
0.61 TC = 25°C
IC = 5.3A
0 .6 0
0 .5 9
0 .5 8
0 .5 7
0 .5 6
20
25 30 35 40 45 50
R G , G ate R esistance (Ω)
55
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
R G = 50 Ω
V GE = 15V
V CC = 720V
1
I C = 11A
I C = 5.3A
I C = 2.7A
0.1
-60 -40 -20 0 20 40 60 8 0 1 00 120 140 160
TC, C a se T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-253
To Order
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet IRGPF20F.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRGPF20F | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |