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Número de pieza | IRGPF30F | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | IRF | |
Logotipo | ||
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.1026
IRGPF30F
Fast Speed IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency
curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 900V
VCE(sat) ≤ 3.7V
@VGE = 15V, IC = 11A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
900
20
11
40
40
±20
10
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-255
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
1.2
—
40
—
Units
°C/W
g (oz)
Revision 0
To Order
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IRGPF30F
1000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
800 Coes = Cce + C gc
Cies
600
Coes
400
200
Cres
0
1 10 100
V CE , C ollector-to-E m itter V oltage (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 11A
16
12
8
4
0
0 5 10 15 20
Q g , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
25
1.10
VCC = 720V
VG E = 15V
1.08 TC = 25°C
IC = 11A
1.06
1.04
1.02
1.00
0.98
20
25 30 35 40 45 50
R G , Gate Resistance (Ω )
55
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
RG = 22 Ω
V GE = 1 5 V
V CC = 72 0V
1
IC = 22A
I C = 11A
I C = 5.5A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, C ase Tem peratu re (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-259
To Order
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet IRGPF30F.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRGPF30F | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
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