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PDF IRGPF50F Data sheet ( Hoja de datos )
| Número de pieza | IRGPF50F | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.767A
IRGPF50F
Fast Speed IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 900V
VCE(sat) ≤ 2.7V
@VGE = 15V, IC = 28A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
900
51
28
100
100
±20
20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-267
Min.
------
------
------
------
Typ.
------
0.24
------
6 (0.21)
Max.
0.64
------
40
------
Units
°C/W
g (oz)
Revision 0
To Order
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IRGPF50F
5000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
4000 Coes = Cce + C gc
Cies
3000
Coes
2000
1000 Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 28A
16
12
8
4
0
0 20 40 60 80
Q g , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
4.4
VC C = 720V
4.2 VG E = 1 5V
TC = 25°C
4.0 IC = 28A
3.8
3.6
3.4
3.2
3.0
2.8
2.6
0
10 20 30 40 50 60
R G , G ate R esistance (Ω)
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
100
RG = 5Ω
V GE = 15V
V CC = 720V
10
1
IC = 56A
IC = 28A
IC = 14A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Tem perature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-271
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRGPF50F.PDF ] | |
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