|
|
PDF IRGPC40S Data sheet ( Hoja de datos )
| Número de pieza | IRGPC40S | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRGPC40S (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Previous Datasheet
Index
Next Data Sheet
INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.692A
IRGPC40S
Standard Speed IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(sat) ≤ 1.8V
@VGE = 15V, IC = 31A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
50
31
240
120
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-27
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
0.77
—
40
—
Units
°C/W
g (oz)
To Order
1 page  
Previous Datasheet
Index
Next Data Sheet
IRGPC40S
3000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
Coes = Cce + C gc
Cies
2000
Coes
1000
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 31A
16
12
8
4
0
0 10 20 30 40 50
Q g , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
60
14.6
VCC = 480V
VG E = 15V
14.4 TC = 25°C
IC = 31A
14.2
14.0
13.8
13.6
13.4
13.2
0
10 20 30 40 50
R G , Gate Resistance (Ω )
60
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
100
R G = 10 Ω
V GE = 15V
V CC = 480V
10
I C = 62A
I C = 31A
I C = 16A
1
-60 -40 -20 0 20 40 60 8 0 1 00 120 140 160
TC, C a se T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-31
Revision 0
To Order
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRGPC40S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRGPC40 | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
| IRGPC40F | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
| IRGPC40FD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY | IRF |
| IRGPC40K | INSULATED GATE BIPOLAR TRANSISTOR |  International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |