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PDF IRGP20B120UD-E Data sheet ( Hoja de datos )
| Número de pieza | IRGP20B120UD-E | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD- 93817
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP20B120UD-E
UltraFast CoPack IGBT
Features
• UltraFast Non Punch Through (NPT)
Technology
• Low Diode VF (1.67V Typical @ 20A & 25°C)
• 10 µs Short Circuit Capability
• Square RBSOA
• UltraSoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
C
G
E
N-channel
VCES = 1200V
VCE(on) typ. = 3.05V
VGE = 15V, IC = 20A, 25°C
Benefits
• Benchmark Efficiency Above 20KHz
• Optimized for Welding, UPS, and Induction Heating
Applications
• Rugged with UltraFast Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer Leads for Easier Mounting
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current (Fig.1)
Continuous Collector Current (Fig.1)
Pulsed Collector Current (Fig.3, Fig. CT.5)
Clamped Inductive Load Current(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (Fig.2)
Maximum Power Dissipation (Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
TO-247AD
Max.
1200
40
20
120
120
20
120
± 20
300
120
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
ZθJC
www.irf.com
Parameter
Min.
Junction-to-Case - IGBT
–––
Junction-to-Case - Diode
–––
Case-to-Sink, flat, greased surface
–––
Junction-to-Ambient, typical socket mount
–––
Weight
–––
Transient Thermal Impedance Junction-to-Case (Fig.24)
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.42
0.83
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1
12/14/99
1 page  
Fig.9 - Typical V CE vs V GE
Tj= -40°C
20
18
16
14
12
10 I CE =10A
8 I CE =20A
I CE =40A
6
4
2
0
6 8 10 12 14 16 18 20
V GE (V)
Fig.11 - Typical V CE vs V GE
Tj= 125°C
20
18
16
14
12
10 I CE =10A
8 I CE =20A
I CE =40A
6
4
2
0
6
www.irf.com
8 10 12 14 16 18 20
V GE (V)
IRGP20B120UD-E
Fig.10 - Typical V CE vs V GE
Tj= 25°C
20
18
16
14
12
10 I CE =10A
8 I CE =20A
I CE =40A
6
4
2
0
6 8 10 12 14 16 18 20
V GE (V)
Fig.12 - Typ. Transfer Characteristics
V CE=20V; tp=20µs
250
Tj=25°C
225 Tj=125°C
200
175
150
125
100
75
50
25 Tj=125°C
0
04
Tj=25°C
8 12
V GE (V)
16
20
5
5 Page 
Fig. WF.1 - Typ. Turn-off Loss Waveform
@ Tj=125°C using Fig. CT.4
1000
25
800
90% ICE
20
600
tf
400
15
10
200
5% VCE
5% ICE
5
00
Eof f Loss
-200
-5
-0.2 0.0 0.2 0.4 0.6 0.8
t i me (µs)
Fig. WF.3 - Typ. Diode Recovery Waveform
@ Tj=125°C using Fig. CT.4
600 30
400
200
0
-200
-400
-600
QRR
tRR
10%
Peak
IRR
Peak
IRR
20
10
0
-10
-20
-30
-800 -40
-0.2 0.0 0.2 0.4 0.6 0.8
t i me (µs)
www.irf.com
IRGP20B120UD-E
Fig. WF.2 - Typ. Turn-on Loss Waveform
@ Tj=125°C using Fig. CT.4
800 80
600
400
tr
90% test current
TEST CURRENT
200
10% test current
5% VCE
0
Eon Loss
60
40
20
0
-200
-20
-0.2 -0.1 0.0 0.1 0.2 0.3
t i me (µs)
Fig. WF.4 - Typ. S.C. Waveform
@ TC=150°C using Fig. CT.3
1200
250
1000
200
800 150
600 100
400 50
200 0
0
-10
0 10 20
t i me (µs)
-50
30
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRGP20B120UD-E.PDF ] | |
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