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PDF IRGP450U Data sheet ( Hoja de datos )

Número de pieza IRGP450U
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes IRF 
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.1033A
IRGP450U
UltraFast IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 500V
VCE(sat) 3.2V
@VGE = 15V, IC = 33A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
500
59
33
120
120
±20
20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-611
Min.
Typ.
0.24
6 (0.21)
Max.
0.64
40
Units
°C/W
g (oz)
Revision 0
To Order

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IRGP450U pdf
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IRGP450U
6000
V GE = 0V,
f = 1MHz
C ies = C g e + C gc , C ce SH O R TE D
C res = C gc
C oes= C ce + C gc
4000 C ies
Coes
2000
C res
0
1 10 100
V C E , C ollector-to-Em itter Voltage (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 33A
16
12
8
4
0
0 30 60 90
QG , Total Ga te C ha rge (nC )
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
120
2.20
VCC = 400V
VGE = 15V
2.00 TC = 25°C
IC = 33A
1.80
1.60
1.40
1.20
1.00
0.80
0
10 20 30 40 50
R G , G ate R esis tance ()
60
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
IC = 66A
I C = 33A
1
I C = 17A
RG = 5
V GE = 15V
0.1 V C C = 400V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC , C ase Tem p erature (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-615
To Order

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