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PDF CA3127 Data sheet ( Hoja de datos )

Número de pieza CA3127
Descripción High Frequency NPN Transistor Array
Fabricantes Intersil　
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CA3127
August 1996
High Frequency NPN Transistor Array
Features
Description
• Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz
• Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
• Five Independent Transistors on a Common Substrate
Applications
• VHF Amplifiers
• Multifunction Combinations - RF/Mixer/Oscillator
The CA3127 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Each of the
completely isolated transistors exhibits low 1/f noise and a
value of fT in excess of 1GHz, making the CA3127 useful
from DC to 500MHz. Access is provided to each of the termi-
nals for the individual transistors and a separate substrate
connection has been provided for maximum application flexi-
bility. The monolithic construction of the CA3127 provides
close electrical and thermal matching of the five transistors.
Ordering Information
• Sense Amplifiers
• Synchronous Detectors
• VHF Mixers
• IF Converter
• IF Amplifiers
• Synthesizers
• Cascade Amplifiers
PART
NUMBER
(BRAND)
TEMP.
RANGE (oC)
PACKAGE
PKG.
NO.
CA3127E
-55 to 125 16 Ld PDIP
E16.3
CA3127M
(3127)
-55 to 125 16 Ld SOIC
M16.15
CA3127M96 -55 to 125 16 Ld SOIC Tape and Reel M16.15
(3127)
Pinout
CA3127
(PDIP, SOIC)
TOP VIEW
1
Q1
2
Q2
3
4
SUBSTRATE 5
6
Q3
7
8
16
15
14
13
Q5
12
11
Q4
10
9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
5-1
File Number 662.3

1 page




CA3127 pdf
CA3127
Typical Performance Curves (Continued)
40
35
TA = 25oC, VCE = 6V, RL = 100Ω
FOR TEST CIRCUIT SEE FIGURE 19
30
25
IC = 5mA
20
15 IC = 1mA
10
IC = 0.5mA
5
0
-5
-10
1
IC = 0.2mA
10 100
FREQUENCY (MHz)
FIGURE 9. VOLTAGE GAIN vs FREQUENCY
1000
40
IC = 5mA
35
30 IC = 1mA
25 IC = 0.5mA
20 IC = 0.2mA
15
10
5
0
-5 TA = 25oC, VCE = 6V, RL = 1kΩ
FOR TEST CIRCUIT SEE FIGURE 19
-10
1 10 100
FREQUENCY (MHz)
FIGURE 10. VOLTAGE GAIN vs FREQUENCY
1000
100
TA = 25oC
90 VCE = 6V
80
70
60
50
40
0.1
1.0
COLLECTOR CURRENT (mA)
10
FIGURE 11. DC FORWARD-CURRENT TRANSFER RATIO (hFE)
vs COLLECTOR CURRENT
TA = 25oC, VCE = 6V, IC = 1mA
8
7
b11
6
5
g11
4
3
2
1
0
100
FREQUENCY (MHz)
1000
FIGURE 12. INPUT ADMITTANCE (Y11) vs FREQUENCY
TA = 25oC
VCE = 6V
f = 200MHz
9
8 g11
7
6
5 b11
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR CURRENT (mA)
FIGURE 13. INPUT ADMITTANCE (Y11) vs COLLECTOR
CURRENT
1.3
1.2 TA = 25oC
1.1
VCE = 6V
IC = 1mA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
b22
g22
FREQUENCY (MHz)
8
7
6
5
4
3
2
1
0
1000
FIGURE 14. OUTPUT ADMITTANCE (Y22) vs FREQUENCY
5-5

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