(PDF) K1773 Datasheet - Silicon N-Channel MOS FET

Número de pieza	K1773
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi
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No Preview Available ! 2SK1773 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 12 5A 8 4 2A ID= 1 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 10 8 Pulse Test VGS = 10 V 6 ID= 5 A 4 2 2A 1A 0 –40 0 40 80 120 160 Case Temperature TC (°C) 2SK1773 Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 10 5 VGS = 10 V 2 1 0.5 0.2 0.5 1 2 5 10 20 Drain Current I D(A) Forward Transfer Admittance vs. Drain Current 10 5 Tc = – 25°C 2 25°C 75°C 1 0.5 0.2 V DS = 10 V Pulse Test 0.1 0.05 0.1 0.2 0.5 1 Drain Current ID (A) 2 5 5 5 Page

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PDF K1773 Data sheet ( Hoja de datos )