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PDF IRG4PH40UD2 Data sheet ( Hoja de datos )

Número de pieza IRG4PH40UD2
Descripción Insulated Gate Bipolar Transistor
Fabricantes IRF 
Logotipo IRF Logotipo



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PD - 94739
IRG4PH40UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
ÙPulse Collector Current
™Clamped Inductive Load current
IF @ Tc = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
RθJA
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Wt Weight
www.irf.com
Max.
600
40
20
160
160
10
40
±20
160
65
-55 to +150
y y300 (0.063 in. (1.6mm) from case)
10 lbf in (1.1N m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.77
2.5
–––
40
–––
Units
°C/W
g (oz.)
1
07/31/03

1 page




IRG4PH40UD2 pdf
4000
3500
3000
2500
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
2000
1500
1000
500
Coes
Cres
0
1
10
VCE, Collector-toEmitter-Voltage(V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PH40UD2
14.0
12.0
IC= 20A
VCC= 400V
10.0
8.0
6.0
4.0
2.0
0.0
0
20 40 60 80 100
QG Total Gate Charge (nC)
120
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3500
3250
VCE = 600V
VGE = 15V
TJ = 25°C
IC = 20A
3000
2750
2500
0
10 20 30 40
RG, Gate Resistance ()
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
11000
10000
9000
ÃRG = 10
VGE = 15V
IC = 40A
8000
7000
6000
5000
IC = 20A
4000
3000
2000
1000
IC = 10A
0
-55 -5 45 95
TJ, Juntion Temperature (°C)
145
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5

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