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PDF IRG4PF50WD Data sheet ( Hoja de datos )
| Número de pieza | IRG4PF50WD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD- 91788
IRG4PF50WD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Optimized for use in Welding and Switch-Mode
Power Supply applications
• Industry benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
G
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
parameter distribution coupled with
exceptional reliability
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-die
MOSFETs up to 100kHz
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
Absolute Maximum Ratings
C
E
n-channel
VCES = 900V
VCE(on) typ. = 2.25V
@VGE = 15V, IC = 28A
TO-247AC
Parameter
VCES
Collector-to-Emitter Breakdown Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Max.
900
51
28
204
204
16
204
± 20
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.64
0.83
–––
40
–––
Units
°C/W
g (oz)
1
1 page  
IRG4PF50WD
6000
5000
4000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
3000
2000
1000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
20
VCC = 400V
I C = 28A
16
12
8
4
0
0 40 80 120 160
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
6.0
VCC = 720V
VGE = 15V
TJ = 25 ° C
5.5 IC = 28A
5.0
4.5
4.0
3.5
0
10 20 30 40
RG , Gate Resistance( Ω )
50
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100 RG = 5.0Ω
VGE = 15V
VCC = 720V
IC = 56 A
10
IC = 28 A
IC = 14 A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4PF50WD.PDF ] | |
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