PDF IRHM7450 Data sheet ( Hoja de datos )

Número de pieza	IRHM7450
Descripción	REPETITIVE AVALANCHE AND dv/dt RATED
Fabricantes	IRF
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No Preview Available ! PD - 90673A IRHM7450 IRHM8450 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270 HEXFET® TRANSISTOR JANSH2N7270 N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω, MEGA RAD HARD HEXFET Product Summary International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, In- ternational Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviv- ing transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paral- leling and temperature stability of the electrical pa- rameters. They are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Absolute Maximum Ratings Part Number IRHM7450 IRHM8450 BVDSS 500V 500V RDS(on) 0.45Ω 0.45Ω ID 11A 11A Features: n Radiation Hardened up to 1 x 106 Rads (Si) n Single Event Burnout (SEB) Hardened n Single Event Gate Rupture (SEGR) Hardened n Gamma Dot (Flash X-Ray) Hardened n Neutron Tolerant n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Rating n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Ceramic Eyelets Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter IRHM7450, IRHM8450 Units Continuous Drain Current Continuous Drain Current 11 7.0 A Pulsed Drain Current 44 Max. Power Dissipation 150 W Linear Derating Factor 1.2 W/°C Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 500 mJ Avalanche Current 11 A Repetitive Avalanche Energy 15 mJ Peak Diode Recovery dv/dt 3.5 V/ns Operating Junction Storage Temperature Range -55 to 150 oC Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 9.3 (typical) g www.irf.com 1 02/01/99 1 page Post-Irradiation IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation Fig 9. High Dose Rate (Gamma Dot) Test Circuit www.irf.com 5 5 Page Pre-Irradiation IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices 15V VDS L D R IV E R RG 12 20 VV tp D .U .T IA S 0 .0 1Ω + - VD D A Fig 29a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 29c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 29b. Unclamped Inductive Waveforms 12 V QGS VG QG QGD Charge Fig30a. Basic Gate Charge Waveform www.irf.com Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF + D.U.T. -VDS VGS 3mA IG ID Current Sampling Resistors Fig 30b. Gate Charge Test Circuit 11 11 Page

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