DataSheet.es    


PDF IRHMS593160 Data sheet ( Hoja de datos )

Número de pieza IRHMS593160
Descripción RADIATION HARDENED POWER MOSFET THRU-HOLE
Fabricantes IRF 
Logotipo IRF Logotipo



Hay una vista previa y un enlace de descarga de IRHMS593160 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! IRHMS593160 Hoja de datos, Descripción, Manual

PD - 94283B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597160
100V, P-CHANNEL
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMS597160 100K Rads (Si)
IRHMS593160 300K Rads (Si)
RDS(on)
0.05
0.05
ID
-45A*
-45A*
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
n High Electrical Conductive Package
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-45*
-30
-180
208
1.67
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
±20
480
-45
20.8
-6.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063in./1.6mm from case for 10s)
Weight
9.3 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
07/20/04

1 page




IRHMS593160 pdf
Pre-Irradiation
IRHMS597160
10000
8000
6000
4000
VGS = 0V, f = 1MHz
CCirssss
=
=
CCggsd
+
Cgd
,
Cds
SHORTED
Coss = Cds + Cgd
Ciss
Coss
2000
0
1
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -45A
16
12
VVDDSS
=
=
-80V
-50V
VDS =-20V
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160 200 240
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10 TJ = 25 ° C
1
0.1
0.0
VGS = 0 V
1.5 3.0 4.5
-VSD ,Source-to-Drain Voltage (V)
6.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
10ms
100
-VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet IRHMS593160.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRHMS593160RADIATION HARDENED POWER MOSFET THRU-HOLEIRF
IRF

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar