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PDF IRHM9250 Data sheet ( Hoja de datos )
| Número de pieza | IRHM9250 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) | |
| Fabricantes | IRF | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRHM9250 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 91299D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
IRHM9250
JANSR2N7423
200V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM9250 100K Rads (Si)
IRHM93250 300K Rads (Si)
RDS(on) ID QPL Part Number
0.315Ω -14A JANSR2N7423
0.315Ω -14A JANSF2N7423
International Rectifier’s RAD-Hard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-14
-9.0 A
-56
150 W
1.2 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy ➁
500
mJ
IAR Avalanche Current ➀
-14 A
EAR
Repetitive Avalanche Energy ➀
15 mJ
dv/dt
Peak Diode Recovery dv/dt ➂
-41 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
oC
Weight
9.3 (Typical )
g
For footnotes refer to the last page
www.irf.com
1
2/19/03
1 page  
Pre-Irradiation
IRHM9250
8000
6000
4000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
2000
Crss
0
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -14 A
16
VDS = -160V
VDS
VDS
=
=
-100V
-40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 50 100 150 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10 TJ = 25° C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
-VSD ,Source-to-Drain Voltage (V)
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
10
1ms
TC = 25°C
TJ = 150 ° C
10ms
Single Pulse
1
10 100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHM9250.PDF ] | |
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