DataSheet.es    


PDF IRFSL59N10D Data sheet ( Hoja de datos )

Número de pieza IRFSL59N10D
Descripción Power MOSFET ( Transistor )
Fabricantes IRF 
Logotipo IRF Logotipo



Hay una vista previa y un enlace de descarga de IRFSL59N10D (archivo pdf) en la parte inferior de esta página.


Total 11 Páginas

No Preview Available ! IRFSL59N10D Hoja de datos, Descripción, Manual

PD - 93890
SMPS MOSFET
IRFB59N10D
IRFS59N10D
IRFSL59N10D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
100V
RDS(on) max
0.025
ID
59A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB59N10D
D2Pak
TO-262
IRFS59N10D IRFSL59N10D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Typical SMPS Topologies
l Half-bridge and Full-bridge DC-DC Converters
l Full-bridge Inverters
Notes  through ‡ are on page 11
www.irf.com
Max.
59
42
236
3.8
200
1.3
± 30
3.3
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
1
4/17/00

1 page




IRFSL59N10D pdf
IRFB/IRFS/IRFSL59N10D
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5

5 Page





IRFSL59N10D arduino
IRFB/IRFS/IRFSL59N10D
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
TRL
10.90 (.429)
10.70 (.421)
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
2 7.4 0 (1.079 )
2 3.9 0 (.9 41)
4
330.00
(14.173)
MAX.
6 0.0 0 (2.36 2)
M IN .
Notes:
NO TES :
1 . CO M F OR M S TO E IA -418 .
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER .
3 . DIM E NS IO N M EA S UR E D @ H U B.
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
 Repetitive rating; pulse width limited by
„ Pulse width 300µs; duty cycle 2%.
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.8mH
RG = 25, IAS = 35.4A.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ƒ ISD 35.4A, di/dt 350A/µs, VDD V(BR)DSS,
TJ 175°C
† This is only applied to TO-220AB package
‡ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
www.irf.com
11

11 Page







PáginasTotal 11 Páginas
PDF Descargar[ Datasheet IRFSL59N10D.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRFSL59N10DPower MOSFET ( Transistor )IRF
IRF
IRFSL59N10DPBFHEXFET Power MOSFETInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar