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PDF IRFS520A Data sheet ( Hoja de datos )

Número de pieza IRFS520A
Descripción Advanced Power MOSFET
Fabricantes Fairchild 
Logotipo Fairchild Logotipo



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No Preview Available ! IRFS520A Hoja de datos, Descripción, Manual

Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175ΟC Operating Temperature
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.155 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC )
Continuous Drain Current (TC=100 ΟC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O2
O1
O1
O3
Total Power Dissipation (TC=25 ΟC )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
IRFS520A
BVDSS = 100 V
RDS(on) = 0.2
ID = 7.2 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
100
7.2
5.1
37
+_ 20
104
7.2
2.8
6.5
28
0.19
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
R θ JC
R θ JA
Characteristic
Junction-to-Case
Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
Typ.
--
--
Max.
5.4
62.5
Units
ΟC /W
Rev. B

1 page




IRFS520A pdf
N-CHANNEL
POWER MOSFET
IRFS520A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50K
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
VDS
10V
Qgs
DUT
3mA
R1 R2
Current Sampling (I G) Current Sampling (I D)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
Vin 10%
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Vary tp to obtain
required peak ID
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
10V
RG
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time

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